1 CMPA2735075F 75 w, 2.7 - 3.5 ghz, gan mmic, power amplifer crees CMPA2735075F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic contains a two-stage reactively matched amplifer design approach enabling very wide bandwidths to be achieved. t his mmic enables extremely wide bandwidths to be achieved in a small footprint screw-down package. re v 2.0 C ma y 2015 pn: CMPA2735075F package type: 780019 typical performance over 2.7-3.5 ghz (t c = 25?c) parameter 2.7 ghz 2.9 ghz 3.1 ghz 3.3 ghz 3.5 ghz units small signal gain 27 29 29 28 27 db saturated output power, p sat 1 59 76 89 90 83 w power gain @ p sat 1 21 23 24 24 23 db pae @ p sat 1 43 54 56 56 56 % note 1 : p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 2-8 ma. features ? 27 db small signal gain ? 80 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? 0.5 x 0.5 total product size applications ? civil and military pulsed radar ampli - fers figure 1. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units conditions drain-source voltage v dss 84 vdc 25c gate-source voltage v gs -10, +2 vdc 25c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i g 28 ma 25c screw torque t 40 in-oz thermal resistance, junction to case (packaged) 1 r jc 2.5 ?c/w 300 sec, 20%, 85c notes: 1 measured for the CMPA2735075F at p diss = 64 w. electrical characteristics (frequency = 2.9 ghz to 3.5 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 28 ma gate quiescent voltage v gs(q) C -2.7 C v dc v dd = 28 v, i dq = 700 ma, freq = 2.9 ghz saturated drain current 1 i ds 19.6 27.4 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 28 ma rf characteristics 2,3 small signal gain 1 s21 C 29 C db v dd = 28 v, i dq = 700 ma, freq = 2.9 ghz small signal gain 2 s21 26.5 29 C db v dd = 28 v, i dq = 700 ma, freq = 3.1 ghz small signal gain 3 s21 26 27 C db v dd = 28 v, i dq = 700 ma, freq = 3.5 ghz power output 1 p out C 76 C w v dd = 28 v, i dq = 700 ma, p in = 28 dbm, freq = 2.9 ghz power output 2 p out 66 82 C w v dd = 28 v, i dq = 700 ma, p in = 28 dbm, freq = 3.1 ghz power output 3 p out 66 85 C w v dd = 28 v, i dq = 700 ma, p in = 28 dbm, freq = 3.5 ghz power added effciency 1 pae C 54 C % v dd = 28 v, i dq = 700 ma, freq = 2.9 ghz power added effciency 2 pae 45 54 C % v dd = 28 v, i dq = 700 ma, freq = 3.1 ghz power added effciency 3 pae 45 53 C % v dd = 28 v, i dq = 700 ma, freq = 3.5 ghz power gain 1 g p C 23 C db v dd = 28 v, i dq = 700 ma, freq = 2.9 ghz power gain 2 g p 20 21 C db v dd = 28 v, i dq = 700 ma, freq = 3.1 ghz power gain 3 g p 20 21 C db v dd = 28 v, i dq = 700 ma, freq = 3.5 ghz input return loss 1 s11 C -11 -8 db v dd = 28 v, i dq = 700 ma, freq = 3.1 ghz input return loss 2 s11 C -16 -10 db v dd = 28 v, i dq = 700 ma, freq = 3.5 ghz output return loss 1 s22 C -9 C4 db v dd = 28 v, i dq = 700 ma, freq = 3.1 ghz output return loss 2 s22 C -17 C10 db v dd = 28 v, i dq = 700 ma, freq = 3.5 ghz output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 700 ma, p out = 75w cw notes: 1 scaled from pcm data. 2 all data pulse tested in CMPA2735075F-amp 3 pulse width = 300 s, duty cycle = 20%. CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 typical performance of the CMPA2735075F gain and input return loss vs frequency of the CMPA2735075F measured in CMPA2735075F-amp amplifer circuit. v ds = 28 v, i ds = 700 ma output power, gain and pae vs frequency of the CMPA2735075F measured in CMPA2735075F-amp amplifer circuit. v ds = 28 v, i ds = 700 ma, pulse width = 300 s, duty cycle = 20% -5 0 5 10 25 30 35 40 i n p u t r etu r n l o ss ( d b ) gai n ( d b ) cgh2735075 small signal performance gain (db) -30 -25 -20 -15 -10 0 5 10 15 20 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 i n p u t r etu r n l o ss ( d b ) gai n ( d b ) frequency (ghz) s21 (db) s11 (db) irl (db) 60 70 80 90 100 47 48 49 50 51 p a e ( % ) & gai n ( d b ) ou t p u t po w er ( d b m) cgh2735075 pout, pae and pgain vs frequency output power (dbm) pae (%) 0 10 20 30 40 50 41 42 43 44 45 46 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 p a e ( % ) & gai n ( d b ) ou t p u t po w er ( d b m) frequency (ghz) gain (db) CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical pulse droop performance electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c pulse width duty cycle (%) droop (db) 10 us 5-25 0.30 50 us 5-25 0.30 100 us 5-25 0.30 300 us 5-25 0.35 1 ms 5-25 0.40 5 ms 5-25 0.55 48.7 48.8 48.9 49.0 49.1 49.2 49.3 49.4 49.5 49.6 49.7 - 10123456 o u t p u t p o w e r ( d b m ) time (ms) CMPA2735075F pulsed power performance 300 us 5 % 300 us 10 % 300 us 20 % 300 us 25 % 1 ms 5 % 1 ms 10 % 1 ms 20 % 1 ms 25 % 5 ms 5 % 5 ms 10 % 5 ms 20 % 5 ms 25 % CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 CMPA2735075F -amp demonstration amplifer circuit bill of materials designator description qty c1 cap, 15000pf, 100v, 0805, x7r 1 c2 cap, 1000uf, 20%, 50v, elect, mvy, smd 1 r1 res, 1/8w, 1206, +/-5%, 0 ohms 1 r2 res, 1/16w, 0603, +/-5%, 10k ohms 1 l1 ferrite, 22 ohm, 0805, blm21pg220sn1 1 j1,j2 connector, n-type, female, w/0.500 sma flng 2 j3 connector, header, rt>plz .1cen lk 9pos 1 j4 connector, smb, straight jack, smd 1 - pcb, taconic, rf-35-0100-ch/ch 1 q1 CMPA2735075F 1 notes 1 the CMPA2735075F is connected to the pcb with 2.0 mil au bond wires. CMPA2735075F-amp demonstration amplifer circuit CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 CMPA2735075F-amp demonstration amplifer circuit schematic CMPA2735075F -amp demonstration amplifer circuit outline CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 product dimensions CMPA2735075F (package type 780019) CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 part number system parameter value units lower frequency 2.7 ghz upper frequency 3.5 ghz power output 75 w package flange - table 1. note: alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA2735075F CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 product ordering information order number description unit of measure image CMPA2735075F gan hemt each CMPA2735075F-tb test board without gan mmic each CMPA2735075F-amp test board with gan mmic installed each CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA2735075F rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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